Please, scroll down to see all the PUBLICATIONS from the 3rd PERIOD!
Dissemination activities carried out by the REACTION partners through scientific publications:
| Partners involved | Title | Publications (including JCR journals, conference proceedings, articles in press or submitted) |
| CNR-ST | High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy | P. Fiorenza, M.S. Alessandrino, B. Carbone, A. Russo, F. Roccaforte, F. Giannazzo, High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy, Nanomaterials 11, (2021) 1626. https://doi.org/10.3390/nano11061626 |
| CNR | Selective Doping in Silicon Carbide Power Devices | F. Roccaforte, P. Fiorenza, M. Vivona, G. Greco, F. Giannazzo, Selective Doping in Silicon Carbide Power Devices, Materials 14, (2021) 3923. https://doi.org/10.3390/ma14143923 |
| CNR-ST | Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations | P. Fiorenza, C. Bongiorno, F. Giannazzo, M.S. Alessandrino, A. Messina, M. Saggio, F. Roccaforte, Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations, Appl. Surf. Sci. 557, (2021) 149752. https://doi.org/10.1016/j.apsusc.2021.149752 |
| CNR-ST | Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC | M. Vivona, G. Greco, G. Bellocchi, L. Zumbo, S. Di Franco, M. Saggio, S. Rascunà, F. Roccaforte, Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC, J. Phys. D: Appl. Phys. 54, (2021) 055101. https://doi.org/10.1088/1361-6463/abbd65 |
| CNR-ST | Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC | M. Vivona, G. Greco, M. Spera, P. Fiorenza, F. Giannazzo, A. La Magna, F. Roccaforte, Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC, J. Phys. D: Appl. Phys. 54, (2021) 445107. https://doi.org/10.1088/1361-6463/ac13f3 |
| IUNET-UNIBO, UNICAL, UNIPD | TCAD modeling of bias temperature instabilities in SiC MOSFETs | G. Carangelo, S. Reggiani, G. Consentino, F. Crupi, G. Meneghesso Solid-State Electronics, Volume 185, 2021, 108067 https://doi.org/10.1016/j.sse.2021.108067 |
| DAC | Design of a 20-kW SiC-Based Phase-Shifted DC/DC Full Bridge Converter | P. Grzejszczak, K. Wolski, M. Szmczak, A. Czaplicki and A. Sitnik, “Design of a 20-kW SiC-Based Phase-Shifted DC/DC Full Bridge Converter,” 2021 Progress in Applied Electrical Engineering (PAEE), 2021, pp. 1-5, doi: 10.1109/PAEE53366.2021.9497450. |
| STUBA, STMICRO, CNR | Neural Network for Modelling of SiC Power MOSFET | Aleš Chvála, Ľuboš Černaj, Juraj Marek, Jozef Kozárik, Angelo Alberto Messina, Vincenzo Vinciguerra and Daniel Donoval. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2021, Bristol (UK), 14 – 17 June 2021 |
| STUBA, STMICRO, CNR | Characterization and evaluation of current transport properties of power SiC Schottky diode. | Aleš Chvála, Juraj Marek, Jakub Drobný, L’ubica Stuchlíková, Angelo Alberto Messina, Vincenzo Vinciguerra, Daniel Donoval. Materials Today: Proceedings, DOI:10.1016/j.matpr.2021.06.150 |
| STUBA, STMICRO, CNR | Electrically active defects in SiC planar power MOSFET | DROBNÝ, Jakub – MAREK, Juraj – MATUŠ, Matej – CHVÁLA, Aleš – MESSINA, Angelo Alberto – VINCIGUERRA, Vincenzo – STUCHLÍKOVÁ, Ľubica. In SURFINT – SREN VII: 7th Conference on Progress in applied surface, interface and thin film science. Extended abstract book. November 22-24, 2021. Bratislava: Comenius University, 2021, S. 12-13. ISBN 978-80-223-5296-3. |
| STUBA | The influence of the rapid thermal annealing process on defect distribution in GaAsN Schottky diodes. | KÓSA, Arpád – DAWIDOWSKI, Wojciech – SCIANA, Beata – CHVÁLA, Aleš – STUCHLÍKOVÁ, Ľubica. In SURFINT – SREN VII: 7th Conference on Progress in applied surface, interface and thin film science. Extended abstract book. November 22-24, 2021. Bratislava: Comenius University, 2021, S. 33-34. ISBN 978-80-223-5296-3 |
| STMicro | Modelling the Elastic Energy of a Bifurcated Wafer: a Benchmark of the Analytical Solution vs. The ANSYS Finite Element Analysis | Vincenzo Vinciguerra, Giuseppe Luigi Malgioglio, Antonio Landi, Composite Structures. https://doi.org/10.1016/j.compstruct.2021.114996 |
| UNIPA | Practical Implementation of a Synchronous PWM Strategy for Low Switching Frequency FOC of im Drives with ATSAM3X8E Microcontroller | 2021 Sixteenth International Conference on Ecological Vehicles and Renewable Energies (EVER), 2021, pp. 1-7 |
| ST MICROELECTRONICS, UNIPA | Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter | 2021 IEEE 15th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG). IEEE, 2021. p. 1-6. |
| UNIPA | Enhanced Modelling for Extended Performance Analysis of Interior Permanent Magnet Synchronous Machine Drive fed with Cascaded H-Bridges Multilevel Inverter | 2021 Sixteenth International Conference on Ecological Vehicles and Renewable Energies (EVER). IEEE, 2021. p. 1-9. |
| UNIPA | Fuel Cell Based Inductive Power Transfer System for Supercapacitors Constant Current Charging | 2021 Sixteenth International Conference on Ecological Vehicles and Renewable Energies (EVER). IEEE, 2021. p. 1-6. |
| UNIPA | Uncertainty evaluation in the differential measurements of power losses in a power drive system | Measurement, 183, 109795. |
| UNIPA | A quasi-Z-source-based inductive power transfer system for constant current/constant voltage charging applications | Electronics, 2021, 10.23: 2900. |
| UNIPA | Supercapacitor-Based Shuttle Bus Characterization for Urban Charging Infrastructure | 2021 10th International Conference on Renewable Energy Research and Application (ICRERA). IEEE, 2021. p. 270-275 |
| UNIPA | An Iterative Method for Bifurcation-Free Resonant Inductive Power Transfer System Design | 2021 10th International Conference on Renewable Energy Research and Application (ICRERA). IEEE, 2021. p. 288-293. |
| UNIPA | Experimental investigation on a cascode-based three-phase inverter for AC drives | 2021 AEIT International Conference on Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE). IEEE, 2021. p. 1-6. |
| IUNET-UNIMORE | M. Cioni, A. Chini, “Impact of Soft- and Hard-Switching transitions on VTH and RON Drifts in packaged SiC MOSFETs” | 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 7-11 Nov. 2021, DOI: 10.1109/WiPDA49284.2021.9645124 |
| UNIPA | Switching Frequency Effects on the Efficiency and Harmonic Distortion in a Three-Phase Five-Level CHBMI Prototype with Multicarrier PWM Schemes: Experimental Analysis | Energies, 2022, 15.2: 586. |
| CNR-ST | SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs | P. Fiorenza, C. Bongiorno, A. Messina, M. Saggio, F. Giannazzo, F. Roccaforte, SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs, Proc. of 2022 IEEE International Reliability Physics Symposium (IRPS2022), Dallas, USA, 27-31 March 2022, 3B-3.1. https://doi.org/10.1109/IRPS48227.2022.9764490 |
| IUNET-CNR-ST | Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs | M. Cioni, P. Fiorenza, F. Roccaforte, M. Saggio, S. Cascino, A. Messina, V. Vinciguerra, M. Calabretta, A. Chini, Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs, Proc. of 2022 IEEE International Reliability Physics Symposium (IRPS2022), Dallas, USA, 27-31 March 2022, 5B-3.1. https://doi.org/10.1109/IRPS48227.2022.9764543 |
| CNR-ST | Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures | M. Vivona, G. Bellocchi, R. Lo Nigro, S. Rascunà, F. Roccaforte, Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures, Semicond. Sci. Technol. 37, 015012 (2022). https://doi.org/10.1088/1361-6641/ac3375 |
| CNR | Materials and Processes for Schottky Contacts on Silicon Carbide | M. Vivona, F. Giananzzo, F. Roccaforte, Materials and Processes for Schottky Contacts on Silicon Carbide, Materials 15, (2022) 298. https://doi.org/10.3390/ma15010298 |
| IKERLAN | Multi-Objective Comparative Analysis of Active Modular Rectifier Architectures for a More Electric Aircraft | Unai Atutxa,Igor Baraia-Etxaburu,Víctor Manuel López,Fernando González-Hernando andAlejandro Rujas Link: https://www.mdpi.com/2226-4310/9/2/98 |